| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 15.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 90 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 15 @5A, 4V |
| hFE Max | 150 |
| Input Power (Max) | 90 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 90 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The BD911 from STMicroelectronics is a through hole NPN complementary power transistors in TO-220 package. This device manufactured in epitaxial planar technology.
● Collector to emitter voltage (Vce) is 100V
● Collector current (Ic) is 15A
● Power dissipation (Pd) is 90W
● Collector to emitter saturation voltage of 3V at 10A collector current
● DC current gain (hFE) of 5 at 10A collector current
● Operating junction temperature range from 150°C
ST Microelectronics
6 Pages / 1.12 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
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