TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -15.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 90 W |
Gain Bandwidth Product | 3 MHz |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 15 @5A, 4V |
hFE Max | 150 |
Input Power (Max) | 90 W |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 90 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications.
● 5A Base current
ST Microelectronics
6 Pages / 1.12 MByte
ST Microelectronics
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ST Microelectronics
30 Pages / 0.31 MByte
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