| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -15.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 90 W |
| Gain Bandwidth Product | 3 MHz |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 15 @5A, 4V |
| hFE Max | 150 |
| Input Power (Max) | 90 W |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 90 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The BD912 is a silicon epitaxial base NPN Power Transistor. Designed for use in power linear and switching applications.
● 5A Base current
ST Microelectronics
6 Pages / 1.12 MByte
ST Microelectronics
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ST Microelectronics
30 Pages / 0.31 MByte
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