| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -100 V |
| Current Rating | -10.0 A |
| Case/Package | TO-218-3 |
| Polarity | PNP |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 10A |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 125 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 30 |
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
●Features
●---
● |
● High DC Current Gain HFE = 1000 (min.) @ 5 Adc
● Monolithic Construction with Built-in Base Emitter Shunt Resistors
● These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
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