| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -10.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 10A |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 125 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.2 mm |
| Size-Width | 4.9 mm |
| Size-Height | 12.2 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BDV64BG is a -100V Silicon PNP Bipolar Darlington Plastic Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● High DC current gain
● Collector-base voltage (Vcbo = 100V)
● Emitter-base voltage (Vcbo = 5V)
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