| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 125 W |
| DC Current Gain (hFE) | 3000 |
| Operating Temperature (Max) | 150 ℃ |
The BDV66B is a PNP epitaxial base power Darlington Transistor for audio output stages, general purpose amplifier and switching applications.
● NPN complement BDV67B
Semelab
3 Pages / 0.24 MByte
Multicomp
MULTICOMP BDV66B Bipolar (BJT) Single Transistor, Darlington, PNP, 100V, 6MHz, 125W, 16A
Semelab
SEMELAB BDV66B Bipolar (BJT) Single Transistor, PNP, 100V, 125W, 16A, 3000 hFE
Multicomp
MULTICOMP BDV66A Bipolar (BJT) Single Transistor, Darlington, PNP, 100V, 6MHz, 125W, 16A
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