TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -15.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 85 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
Continuous Collector Current | 15A |
hFE Min | 1000 @5A, 4V |
Input Power (Max) | 85 W |
DC Current Gain (hFE) | 1000 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Gain Bandwidth | 4MHz (Min) |
Power Dissipation (Max) | 85000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.53 mm |
Size-Width | 4.83 mm |
Size-Height | 15.75 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The BDW47G is a 15A NPN-PNP medium-power Darlington Transistor designed for general purpose and low speed switching applications.
● Complementary device
● Monolithic construction with built-in base emitter shunt resistors
ON Semiconductor
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Motorola
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Continental Device
PNP Silicon Planar Darlington Power Transistor
ON Semiconductor
Power 15A 80V-100V NPN 85W , Package: TO-220, Pins=3
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