TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -12.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 80 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 750 @5A, 3V |
Input Power (Max) | 80 W |
DC Current Gain (hFE) | 1000 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 80000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
The BDW94C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
● Complementary to the BDW93C
● Integrated anti-parallel collector-emitter diode
● Well-controlled hFE parameter for increased reliability
ST Microelectronics
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