| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 70 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 10A |
| hFE Min | 750 @3A, 3V |
| hFE Max | 750 @3A, 3V |
| Input Power (Max) | 70 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 70000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.53 mm |
| Size-Width | 4.83 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The BDX33BG is a 10A PNP bipolar power Darlington Transistor designed for general purpose and low speed switching applications.
● Complementary device
● Monolithic construction with built-in base emitter shunt resistors
● Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum @ IC = 3A DC
ON Semiconductor
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