TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 70 W |
Breakdown Voltage (Collector to Emitter) | 100 V |
hFE Min | 750 @3A, 3V |
Input Power (Max) | 70 W |
DC Current Gain (hFE) | 750 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 70000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 150℃ (TJ) |
The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications.
● Complement to BDX34C
● 0.25A Base current
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