| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | NPN |
| Power Dissipation | 29 W |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| Continuous Collector Current | 8A |
| hFE Min | 750 @3A, 3V |
| Input Power (Max) | 29 W |
| DC Current Gain (hFE) | 750 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 29 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | 150℃ (TJ) |
DESCRIPTION
●The BDX53BFP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in T0-220FP fully molded isolated package. It is intented for use in hammer
●drivers, audio amplifiers and other medium power linear and switching applications.
●APPLICATIONS:
●■ GENERAL PURPOSE SWITCHING AND AMPLIFIER
●■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
●■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
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