| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Polarity | NPN |
| Power Dissipation | 60000 mW |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| Continuous Collector Current | 8A |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
BDX53F -> NPN
●BDX54F -> PNP
●DESCRIPTION
●The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F.
●■ STMicroelectronics PREFERRED SALESTYPES
●■ COMPLEMENTARY PNP - NPN DEVICES
●■ MONOLITHIC DARLINGTON CONFIGURATION
●■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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