TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Polarity | PNP |
Power Dissipation | 60000 mW |
Breakdown Voltage (Collector to Emitter) | 160 V |
Continuous Collector Current | 8A |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 60000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
BDX53F -> NPN
●BDX54F -> PNP
●DESCRIPTION
●The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F.
●■ STMicroelectronics PREFERRED SALESTYPES
●■ COMPLEMENTARY PNP - NPN DEVICES
●■ MONOLITHIC DARLINGTON CONFIGURATION
●■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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