| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 800 MHz |
| Number of Pins | 4 Pin |
| Current Rating | 30 mA |
| Case/Package | SOT-143 |
| Number of Positions | 4 Position |
| Power Dissipation | 200 mW |
| Threshold Voltage | 800 mV |
| Drain to Source Voltage (Vds) | 7 V |
| Gain | 20 dB |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200 mW |
| Voltage Rating | 7 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -65℃ ~ 150℃ |
If you"re looking for a MOSFET that is compatible with radio frequency environments, this BF1105R,215 RF amplifier from NXP Semiconductors is for you! Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 150 °C. Its maximum frequency is 1000 MHz.
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