| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 300 V |
| Current Rating | 500 mA |
| Case/Package | TO-92-3 |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 40 @10mA, 10V |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92 (TO-226)
ON Semiconductor
4 Pages / 0.05 MByte
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