| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 60 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -300 V |
| Current Rating | -100 mA |
| Case/Package | TO-261-4 |
| Polarity | PNP, P-Channel |
| Power Dissipation | 1.5 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.05A |
| hFE Min | 50 @25mA, 20V |
| Input Power (Max) | 1.5 W |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The three terminals of this PNP BF721T1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
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