BF990A Datasheet PDF - NXP

N-channel dual-gate MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated diodes between gates and source. APPLICATIONS • RF applications such as: – Television tuners with 12 V supply voltage – Professional communication equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.