| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-143 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such as: – UHF television tuners – Professional communication equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.
NXP
Trans RF MOSFET N-CH 20V 0.03A 4Pin(3+Tab) SOT-143B
NXP
Trans RF MOSFET N-CH 20V 0.03A 4Pin(3+Tab) SOT-143B T/R
Nexperia
Transistor: N-MOSFET; unipolar; dual gate; 20V; 30mA; SOT143
NXP
Transistor: N-MOSFET; unipolar; dual gate; 20V; 30mA; SOT143
VISHAY
Trans RF MOSFET N-CH 20V 0.03A 4Pin(3+Tab) SOT-143 T/R
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N.Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
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N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
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