| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-143 |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 mW |
| Drain to Source Voltage (Vds) | 12 V |
| Continuous Drain Current (Ids) | 30.0 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
The BF998 from NXP is a surface mount, silicon N channel dual gate MOSFET in SOT143B package. This is an depletion type field effect transistor in plastic microminiature with source and substrate interconnected, transistors are protected against input voltage surges by integrated back to back diodes between gates and source. Features high forward transfer admittance to input capacitance ratio and low noise gain controlled amplifier up to 1 GHz. BF998 is used in professional communication equipment and VHF and UHF television tuners.
● Drain to source voltage (Vds) of 12V
● Drain current of 30mA
● Power dissipation of 200mW
● Operating junction temperature of 150°C
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