BF998 Datasheet PDF - Siemens Semiconductor

Silicon N-channel dual-gate MOS-FETs VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage,such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated diodes between gates and source.