| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 45 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 12.0 V |
| Current Rating | 30 mA |
| Case/Package | TO-253-4 |
| Power Rating | 0.2 W |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 mW |
| Drain to Source Voltage (Vds) | 12 V |
| Breakdown Voltage (Drain to Source) | 12 V |
| Continuous Drain Current (Ids) | 300 mA |
| Gain | 28 dB |
| Test Current | 10 mA |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 200 mW |
| Voltage Rating | 12 V |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Infineon
9 Pages / 0.08 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.08 MByte
Infineon
1 Pages / 0.15 MByte
NXP
Trans RF MOSFET N-CH 12V 0.03A 4Pin(3+Tab) SOT-143B
Infineon
Trans RF MOSFET N-CH 12V 0.03A Automotive 4Pin(3+Tab) SOT-143 T/R
Siemens Semiconductor
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1GHz)
Philips
Trans RF MOSFET N-CH 12V 0.03A 4Pin(3+Tab) SOT-143B
Yageo
RF Small Signal Field-Effect Transistor, 1-Element, Silicon
Vishay Semiconductor
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Telefunken
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Temic
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
