| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| DC Current Gain (hFE) | 130 |
| Operating Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
The BFG135 is a 7GHz NPN Silicon Planar Epitaxial Transistor intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile.
● 175°C Junction temperature
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
