TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 25000 MHz |
Number of Pins | 4 Pin |
Case/Package | SOT-343 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 135 mW |
Breakdown Voltage (Collector to Emitter) | 4.5 V |
Gain | 20 dB |
hFE Min | 50 @25mA, 2V |
Input Power (Max) | 135 mW |
DC Current Gain (hFE) | 80 |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 135 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Height | 1 mm |
Operating Temperature | 150℃ (TJ) |
The BFG425W,115 is a NPN double polysilicon Wideband Transistor with buried layer for low voltage applications in a plastic, dual-emitter package. It is designed for use with RF front end, analogue and digital cellular telephones, cordless telephones (PHS, DECT), radar detectors, pagers, SATV tuners and high frequency oscillator applications.
● Very high power gain
● Low noise figure
● High transition frequency
● Emitter is thermal lead
● Low feedback capacitance
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