| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-143 |
| hFE Min | 60 |
| Operating Temperature (Max) | 175 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
DESCRIPTION
●NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range,
●such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.
●FEATURES
●• High power gain
●• Low noise figure
●• High transition frequency
●• Gold metallization ensures excellent reliability.
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