TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-253-4 |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 15 V |
hFE Min | 60 @20mA, 6V |
Input Power (Max) | 300 mW |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | 175℃ (TJ) |
Designed with semiconductor technology, this BFG520/X,235 RF amplifier from NXP Semiconductors easily operates at high RF frequencies. This RF transistor has an operating temperature range of -65 °C to 175 °C.
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