| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-343 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Input Capacitance | 2 pF |
| hFE Min | 100 |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Material | Silicon |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
The BFG540W/X is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic package. The device is intended for RF front end wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
● High power gain
● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability
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