| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 9000 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-253-4 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 400 mW |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| Gain | 18 dB |
| hFE Min | 60 @40mA, 8V |
| Input Power (Max) | 400 mW |
| DC Current Gain (hFE) | 120 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Height | 1 mm |
| Operating Temperature | 150℃ (TJ) |
Superior characteristics of this BFG540/X,215 RF amplifier from NXP Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has an operating temperature range of -65 °C to 150 °C.
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