| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 7000 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-261-4 |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| Gain | 13dB ~ 7.5dB |
| hFE Min | 60 @70mA, 8V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 90 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Height | 1.7 mm |
| Operating Temperature | 150℃ (TJ) |
This BFG591,115 RF amplifier from NXP Semiconductors is designed to operate in high radio frequency input power situations and is perfect for a variety of applications. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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