| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 25000 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TSFP-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 210 mW |
| Input Capacitance | 0.55 pF |
| Breakdown Voltage (Collector to Emitter) | 5.5 V |
| Gain | 19.5 dB |
| hFE Min | 60 @5mA, 4V |
| Input Power (Max) | 160 mW |
| DC Current Gain (hFE) | 60 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 210 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 1.4 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 420F H6327 is a NPN wideband silicon Bipolar RF Transistor designed for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 25GHz, hence the device offers high power gain at frequencies up to 4.5GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.
● General purpose low-noise transistor
● Based on Infineon ́s reliable very high volume 25GHz silicon bipolar technology
● Popular in discrete oscillators
● Thin, small and flat with visible leads
● Halogen-free
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INFINEON BFP 420F H6327 Bipolar - RF Transistor, NPN, 4.5V, 25GHz, 210mW, 60mA, 60
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