| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 24000 MHz |
| Number of Pins | 4 Pin |
| Case/Package | SOT-343-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 500 mW |
| Input Capacitance | 1.7 pF |
| Breakdown Voltage (Collector to Emitter) | 5 V |
| Gain | 15.5 dB |
| hFE Min | 60 @50mA, 4V |
| Input Power (Max) | 450 mW |
| DC Current Gain (hFE) | 95 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 450 H6327 is a NPN wideband Bipolar RF Transistor with its high linearity at currents as low as 50mA the device supports energy efficient designs. The typical transition frequency is approximately 24GHz, hence the device offers high power gain at frequencies up to 3GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
● Low noise transistor
● Based on Infineon ́s reliable very high volume 25GHz silicon bipolar technology
● Halogen-free
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Trans RF BJT NPN 4.5V 0.17A Automotive 4Pin(3+Tab) SOT-343 T/R
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