BFP640F Datasheet PDF - Infineon

Summary of Features:

● High gain low noise RF transistor

●  Provides outstanding performance for a wide range of wireless applications

●  Ideal for CDMA and WLAN applications

●  Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz

● High maximum stable gain:Gms = 23 dB at 1.8 GHz

● Gold metallization for extra high reliability

●  70 GHz fT-Silicon Germanium technology

● Pb-free (RoHS compliant) package1)

● Qualified according AEC Q101