| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 42000 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TSFP-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Input Capacitance | 1.3 pF |
| Breakdown Voltage (Collector to Emitter) | 4.5 V |
| Gain | 11dB ~ 21.5dB |
| hFE Min | 110 @80mA, 3V |
| Input Power (Max) | 500 mW |
| DC Current Gain (hFE) | 110 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.4 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 650F H6327 is a linear low-noise Bipolar RF Transistor for medium power amplifiers and driver stages. The device is based on Infineon"s reliable high volume silicon germanium technology and ideal for low phase noise oscillators.
● Halogen-free
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