| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TSFP-4 |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 160 mW |
| Input Capacitance | 0.5 pF |
| Breakdown Voltage (Collector to Emitter) | 4.7 V |
| Gain | 9dB ~ 31dB |
| hFE Min | 160 @25mA, 3V |
| Input Power (Max) | 160 mW |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.4 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 740FESD H6327 is a NPN very low-noise wideband Bipolar RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hetero-junction bipolar technology. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 47GHz, hence the device offers high power gain at frequencies up to 12GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
● 2kV ESD robustness (HBM) due to integrated protection circuits
● Halogen-free
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