| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SMD-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 160 mW |
| Input Capacitance | 0.4 pF |
| Breakdown Voltage (Collector to Emitter) | 4.7 V |
| Gain | 27.5 dB |
| hFE Min | 160 @25mA, 3V |
| Input Power (Max) | 160 mW |
| DC Current Gain (hFE) | 250 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.4 mm |
| Size-Width | 0.8 mm |
| Size-Height | 0.55 mm |
| Operating Temperature | 150℃ (TJ) |
The BFP 740F H6327 is a NPN linear wideband Bipolar RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 10mA, the device supports energy efficient designs. The typical transition frequency is approximately 45GHz, hence the device offers high power gain at frequencies up to 10GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.
● Very low-noise amplifier
● Low power consumption
● Halogen-free
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