BFR740L3RH Datasheet PDF - Infineon

Description:

●The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of 42 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules.

●Summary of Features:

● Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at

● 5.5 GHz, 3 V, 6 mA

● High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V

● Very thin small leadless package (height only 0.31 mm), hence ideal for modules with compact size and low profile height

● Pb-free (RoHS compliant) and halogen-free package

● Qualification report according to AEC-Q101 available