| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 42000 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 4.00 V |
| Current Rating | 30.0 mA |
| Case/Package | PG-TSLP-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 160 mW |
| Input Capacitance | 0.38 pF |
| Breakdown Voltage (Collector to Emitter) | 4.7 V |
| Gain | 24.5 dB |
| hFE Min | 160 |
| Input Power (Max) | 160 mW |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
The BFR 740L3RH E6327 is a NPN wideband RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hetero-junction bipolar technology. It provides a transition frequency fT of 42GHz and is suited for low voltage applications from VHF to 12GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. It is housed in a very thin small leadless package ideal for modules.
● Very low-noise transistor
● High power gain
● Halogen-free
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