| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 2.5 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 15.0 V |
| Current Rating | 25.0 mA |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 280 mW |
| Input Capacitance | 0.9 pF |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 40 @2mA, 1V |
| Input Power (Max) | 280 mW |
| DC Current Gain (hFE) | 70 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 280 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | 150℃ (TJ) |
The BFS 17P E6327 is a NPN Silicon RF Transistor for broadband amplifiers up to 1GHz at collector currents from 1 to 20mA. It is suitable for use with amplifier and oscillator applications in RF front-end.
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