| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 2500 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-323-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 280 mW |
| Input Capacitance | 0.9 pF |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 40 @2mA, 1V |
| Input Power (Max) | 280 mW |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 280 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | 150℃ (TJ) |
Look no further than the BFS17WH6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This product"s minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
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