| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 5000 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 32 mW |
| Breakdown Voltage (Collector to Emitter) | 5 V |
| Gain | 15 dB |
| hFE Min | 50 @500µA, 1V |
| Input Power (Max) | 32 mW |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 32 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | 175℃ (TJ) |
The BFT25A,215 is a NPN Wideband Transistor encapsulated in a plastic package. It is primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2GHz.
● Low noise figure
● Low current consumption
● Gold metallization ensures excellent reliability
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