| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-253-4 |
| Number of Positions | 4 Position |
| Power Dissipation | 450 mW |
| Input Capacitance | 0.93 pF |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Gain | 21.5 dB |
| hFE Min | 60 @10mA, 8V |
| Input Power (Max) | 450 mW |
| DC Current Gain (hFE) | 95 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 450 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Superior characteristics of this BFU530R RF amplifier from NXP Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
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