TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 11000 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-323-3 |
Number of Positions | 3 Position |
Power Dissipation | 450 mW |
Input Capacitance | 0.84 pF |
Breakdown Voltage (Collector to Emitter) | 12 V |
Gain | 18.5 dB |
hFE Min | 60 @10mA, 8V |
Input Power (Max) | 450 mW |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 450 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
In addition to offering the benefits of traditional BJTs, the BFU530WX RF amplifier from NXP Semiconductors is perfect for high radio frequency power situations. This RF transistor has an operating temperature range of -40 °C to 150 °C.
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