| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-89-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 1 W |
| Input Capacitance | 1.3 pF |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Gain | 8.5 dB |
| hFE Min | 60 @30mA, 8V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 95 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Superior characteristics of this BFU580QX RF amplifier from NXP Semiconductors make it perfect for operating at higher RF frequency ranges than RF MOSFETS. This RF transistor has an operating temperature range of -40 °C to 150 °C.
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