| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 160 mW |
| Input Capacitance | 0.31 pF |
| Output Power | 11.7 dBm |
| Breakdown Voltage (Collector to Emitter) | 3 V |
| Gain | 15.8 dB |
| hFE Min | 205 @2mA, 3V |
| Input Power (Max) | 160 mW |
| DC Current Gain (hFE) | 205 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 160 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 125℃ |
Compared to other transistors, the BFU730LXZ RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 150 °C.
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