BLT81,115 Datasheet PDF - NXP

Manufacturer:	NXP
Category:	BJTs
Case Package:	TO-261-4
Description:	Trans RF BJT NPN 9.5V 0.5A 2000mW 4Pin(3+Tab) SC-73 T/R
Documentation:	BLT81,115 Datasheet (13 Pages)Package Outline Dimension on10 Page BLT81,115 Application Note (12 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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BLT81,115 Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Supply Voltage (DC)	7.50 V
Case/Package	TO-261-4
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	2 W
Output Power	1.2 W
Breakdown Voltage (Collector to Emitter)	9.5 V
Gain	8 dB
hFE Min	25 @300mA, 5V
hFE Max	25
Input Power (Max)	2 W
DC Current Gain (hFE)	25
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
Supply Voltage	6 V