| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Supply Voltage (DC) | 5.00 V |
| Current Rating | 50.0 mA |
| Case/Package | T-1 |
| Rise/Fall Time | 6 ns |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 930 nm |
| Viewing Angle | 15° |
| Peak Wavelength | 930 nm |
| Polarity | NPN |
| Power Dissipation | 150 mW |
| Power Consumption | 150 mW |
| Rise Time | 6 µs |
| Breakdown Voltage (Collector to Emitter) | 70.0 V |
| Fall Time | 5 µs |
| Operating Temperature (Max) | 100 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 5.75 mm |
| Size-Width | 5.75 mm |
| Size-Height | 8.6 mm |
The BPV11F is a black Silicon NPN Phototransistor with high radiant sensitivity and base terminal and daylight blocking filter. Filter bandwidth is matched with 900 to 950nm IR emitters and a base terminal is connected.
● High radiant sensitivity
● Fast response times
● ±15° Angle of half sensitivity
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5 Pages / 0.09 MByte
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