| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Current Rating | 50.0 mA |
| Case/Package | T-3 |
| Rise/Fall Time | 4.8 ns |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 825 nm |
| Viewing Angle | 12° |
| Peak Wavelength | 825 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 4.8 µs |
| Breakdown Voltage (Collector to Emitter) | 32 V |
| Input Power (Max) | 100 mW |
| Fall Time | 5 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 3.3 mm |
| Size-Width | 2.4 mm |
| Size-Height | 2.9 mm |
| Operating Temperature | -40℃ ~ 100℃ (TA) |
The BPW17N is a clear Silicon NPN Phototransistor with high radiant sensitivity. It is sensitive to visible and near infrared radiation and it has high photo and radiant sensitivity.
● Fast response times
● ±12° Angle of half sensitivity
Vishay Semiconductor
6 Pages / 0.09 MByte
Vishay Semiconductor
5 Pages / 0.08 MByte
Vishay Semiconductor
1 Pages / 0.16 MByte
VISHAY
Photodetector Transistors NPN Phototransistor 32V 0.1W(1/10W) 825nm
Vishay Semiconductor
VISHAY BPW17N Phototransistor, 825nm, 12°, 0.1W(1/10W), 2Pins, T-3/4 (1.8mm)
ATMEL
Photo Transistor, 825nm, PLASTIC, 2Pin
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