TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 70.0 V |
Case/Package | TO-18 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Wavelength | 850 nm |
Viewing Angle | 40° |
Peak Wavelength | 850 nm |
Polarity | NPN |
Power Dissipation | 0.25 W |
Power Consumption | 250 mW |
Rise Time | 6 µs |
Breakdown Voltage (Collector to Emitter) | 70 V |
Input Power (Max) | 250 mW |
Fall Time | 5 µs |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 250 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Width | 5.5 mm |
Size-Height | 5.2 mm |
Operating Temperature | -40℃ ~ 125℃ (TA) |
●BPW76A and BPW76B Series Phototransistors
●The BPW76A and BPW76B series, from Vishay Semiconductor, are a family of silicon NPN phototransistors. They are in hermetically sealed TO-18 packages with a glass window. They are sensitive to both visible and near IR radiation. The BPW76A and BPW76B phototransistors are ideal for use as detectors in electronic control and drive circuits.
Vishay Semiconductor
6 Pages / 0.14 MByte
Vishay Semiconductor
5 Pages / 0.14 MByte
Vishay Semiconductor
3 Pages / 0.13 MByte
Vishay Semiconductor
1 Pages / 0.16 MByte
VISHAY
Silicon NPN Phototransistor
ATMEL
Photo Transistor, 850nm, HERMETIC, TO-18
VISHAY
Photodetector Transistors NPN Phototransistor 80V 0.25W(1/4W) 850nm
Vishay Semiconductor
850nm ±40° Sensitivity 70V 50mA Through Hole NPN Phototransistor - TO-18
VISHAY
Photodetector Transistors NPN Phototransistor 80V 0.25W(1/4W) 850nm
Vishay Semiconductor
VISHAY BPW76B Phototransistor, 850nm, 40°, 0.25W(1/4W), 3Pins, TO-18
Vishay Siliconix
NPN Phototransistor 850nm 40deg TO-206AA
Vishay Siliconix
NPN Phototransistor 850nm 40deg TO-206AA
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.