| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 70.0 V |
| Operating Voltage | 5.00 V |
| Case/Package | TO-206 |
| Power Rating | 0.25 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Wavelength | 850 nm |
| Viewing Angle | 20° |
| Peak Wavelength | 850 nm |
| Polarity | NPN |
| Power Dissipation | 250 mW |
| Power Consumption | 250 mW |
| Rise Time | 6 µs |
| Breakdown Voltage (Collector to Emitter) | 70 V |
| Input Power (Max) | 250 mW |
| Fall Time | 5 µs |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Height | 6.15 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The BPW77NA is a Silicon NPN Phototransistor with high radiant sensitivity in hermetically sealed. It is sensitive to visible and near infrared radiation. It is suitable for visible and near infrared radiation.
● High photo sensitivity
● High radiant sensitivity
● Fast response times
● Base terminal connected
● ±10° Angle of half sensitivity
VISHAY
5 Pages / 0.13 MByte
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