TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Case/Package | T-1 |
Power Rating | 0.1 W |
Number of Channels | 1 Channel |
Number of Positions | 2 Position |
Wavelength | 850 nm |
Viewing Angle | 50° |
Peak Wavelength | 850 nm |
Polarity | NPN |
Power Dissipation | 100 mW |
Power Consumption | 100 mW |
Rise Time | 2 µs |
Breakdown Voltage (Collector to Emitter) | 70 V |
Input Power (Max) | 150 mW |
Fall Time | 2.3 µs |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Height | 4.5 mm |
Operating Temperature | -40℃ ~ 100℃ (TA) |
The BPW85 is a clear Silicon NPN Phototransistor with high radiant sensitivity. It is sensitive to visible and near infrared radiation and it has high photo and radiant sensitivity.
● Fast response times
● ±25° Angle of half sensitivity
VISHAY
7 Pages / 0.09 MByte
VISHAY
7 Pages / 0.13 MByte
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