| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Current Rating | 50.0 mA |
| Case/Package | T-1 |
| Power Rating | 0.15 W |
| Rise/Fall Time | 2.3 ns |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 850 nm |
| Viewing Angle | 20° |
| Peak Wavelength | 850 nm |
| Polarity | NPN |
| Power Dissipation | 0.15 W |
| Power Consumption | 150 mW |
| Rise Time | 2 µs |
| Breakdown Voltage (Collector to Emitter) | 70.0 V |
| Fall Time | 2.3 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 5.75 mm |
| Size-Width | 5.75 mm |
| Size-Height | 8.6 mm |
| Operating Temperature | -40℃ ~ 100℃ |
The BPW96C is a Silicon NPN Phototransistor with high radiant sensitivity in clear plastic package. It is sensitive to visible and near infrared radiation. It is suitable for detector in electronic control and drive circuits.
● Leaded package
● Leads with stand-off
● High photo sensitivity
● High radiant sensitivity
● Suitable for visible and near infrared radiation
● Fast response time
● ϕ = ±20° Angle of half sensitivity
VISHAY
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