TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.2 Ω |
Power Dissipation | 0.625 W |
Threshold Voltage | 2.1 V |
Drain to Source Voltage (Vds) | 60 V |
Input Capacitance (Ciss) | 20pF @25V(Vds) |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bag |
Size-Length | 4.7 mm |
Size-Width | 3.93 mm |
Size-Height | 4.7 mm |
Operating Temperature | -55℃ ~ 150℃ |
The BS270 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
● Voltage Controlled Small Signal Switch
● Rugged and Reliable
● High Saturation Current Capability
ON Semiconductor
10 Pages / 0.32 MByte
ON Semiconductor
10 Pages / 0.45 MByte
ON Semiconductor
2 Pages / 0.45 MByte
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